| PART |
Description |
Maker |
| MGFS45V2123 S452123 |
2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFX39V0717 X390717 |
10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段8瓦特国内MATCHD砷化镓场效应
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2735 |
2.7-3.5 GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| EIB1718-2P |
17.7-18.7GHz, 2W internally matched power FET
|
Excelics Semiconductor
|
| EIA1011-2P EIB1011-2P |
10.7-11.7GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1011-4P |
10.7-11.7GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
| EIA1819-2P EIB1819-2P |
18.7-19.7GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFL45V1920A |
1.9 - 2.0 GHz BAND 32W Internally Matched GaAs FET
1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS48V2527_04 MGFS48V2527 MGFS48V252704 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2527A MGFS45V2527A11 |
2.7-3.5 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
